khaled yazbek


1990 - 1994 Ph.D. in Electronics and RF/Microwave from the University of Paris XI, Institute of Fundamental Electronics (Institut d'Electronique Fondamentale - IEF), Orsay, Paris, France. Title: “Ultra submicrometer gatelength High Electron Mobility Transistor (HEMT): Modeling of ultimate performance and comparison with measurements”. The Ph.D. focused on the development of a dedicated quasi-2D modeling of the ultimate performance of different types of HEMT transistors, allowing very quick computation compared to the 2D models. The Ph.D. focused also on the modeling of the external electrostatic capacitances existing between the gate and the source/drain using finite elements method (FEM), and choosing some shapes for the gate that reducing these capacitances, then improving ultra submicrometer gatelength HEMT performance. Different types of HEMT transistors have been manufactured by L2M-LP20 CNRS Bagneux (France) and IMEC Leuven (Belgium). This work was partly supported by EEC under ESPRIT BRA 3042 NanoFET.
1988- 1989 D.E.A. (=M.Sc.) in Optics, Optoelectronics, and Microwaves, specialty in Microwaves from ENSERG (Ecole Nationale Supérieure d'Electronique et de Radioélectricité), Grenoble, France.
1984- 1987 Bachelor of Science in Electronic Engineering, specialty (final year) in Microwave Engineering from ENSERG, Grenoble, France.
1981- 1984 “Classes Préparatoires” in Mathematics and Physics from HIAST (Higher Institute for Applied Sciences and Technology), Damascus, Syria; Preparation for the entrance examinations to the French “Grandes Ecoles”.

Programs list: 


Courses list: 

BACT.BCT - BACT Admission Test
BACT.GBS102 - Career Preparation
BACT.CRF301 - Electromagnetic Waves and Transmission Lines
BACT.CRF403 - Microwave Engineering
BACT.CEE102 - Data Communications
BACT.CEE102 - Data Communications

Academic experience: 

1994 - 2015 Lecturer and researcher at Higher Institute for Applied Sciences and Technology (HIAST), Damascus, Syria, www.hiast.edu.sy.
2002 Lecturer (course training and laboratory measurement) in the Summer University on "Design and Characterization of RF and Microwave Circuits", 31 August - 7 September 2002, Jordan University of Science & Technology, Irbid – Jordan.
1992 – 1994 Lecturer at IUT (Institut Universitaire de Technologie), Cergy, Paris, France : laboratory experiments and activities in Electronics.
1990 - 1992 Lecturer at EPF (Ecole Polytechnique Féminine), Paris, France.


K. Yazbek, A. de Lustrac, Y. Jin, F. Aniel, P. Crozat, R. Adde, G. Vernet, “Electrostatic capacitances in standard and pseudomorphic ultrashort gate length HEMTs”, Electronics Letters, vol. 28, No. 19, 1992.
Jin-Delorme, Y. de Lustrac, A., Crozat, P.; Yazbek, K.; Adde, R.; Vernet, G.; Yin, Y.; Etienne, B.; Launois, H., “Electric parameter evolutions against gatelength and bias in ultrashort gate AlGaAs/GaAs HEMTs”, Electronics Letters, vol. 29, No. 7, 1993.
de Lustrac, A. Crozat, P.; Dollfus, P.; Jin, Y.; Yazbek, K.; Adde, R.; Vernet, G.; Van Hove, M.; De Raedt, W.; Van Rossum, M.; Jin, Y.; Etienne, B.; Launois, H., “Experimental and theoretical investigation of parameter evolution of ultra-short gate standard and pseudomorphic HEMTs”, 22nd European Solid State Device Research Conference, ESSDERC '92, 1992.
Khaled Yazbek, “Multi Standard Reconfigurable Receiver Architecture for Wireless Systems”, International Journal of Science and Research (IJSR), Volume 6, Issue 3, March 2017.
Hazem Deeb, Khaled Yazbek, and Adnan Malki, “2 to 4 GHz Frequency Discriminator for RF Front-End Instantaneous Frequency Measurement Receivers”, Progress In Electromagnetics Research C, Vol. 73, 27–36, 2017.